类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 72Mb (2M x 36) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.4 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX25L25735EMI-12GMacronix |
IC FLASH 256MBIT SPI 80MHZ 16SOP |
|
M95640-RMC6TGSTMicroelectronics |
IC EEPROM 64KBIT SPI 8UFDFPN |
|
93LC46A-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
BR24G08FVM-3AGTTRROHM Semiconductor |
IC EEPROM 8KBIT I2C 1MHZ 8MSOP |
|
93C66C-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8DIP |
|
CY14B104NA-BA25XICypress Semiconductor |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
24AA256T-E/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8DFN |
|
CY7C1415KV18-300BZIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY14B101NA-ZS45XIRochester Electronics |
NON-VOLATILE SRAM, 64KX16, 45NS |
|
CY7C1319KV18-250BZXCRochester Electronics |
DDR SRAM, 1MX18, 0.45NS PBGA165 |
|
71V25761S166PFGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
BR24L08F-WE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8SOP |
|
24LC01BT/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-5 |