类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8K (1K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 450 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S-93C66BD0I-K8T3UABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 2MHZ 8TMSOP |
|
STK12C68-5L35M-SIRochester Electronics |
DUAL MARKED (5962-9459903MYA) |
|
IS61C25616AS-25TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
23A1024-I/STRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/QUAD 8TSSOP |
|
S29GL128S10DHIV23Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
71V67603ZS133PFRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT29F2G08ABBEAH4-IT:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
BR25L020FVT-WE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 5MHZ 8TSSOPB |
|
BR24G32FVT-3AGE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8TSSOPB |
|
CY62158DV30LL-70ZSXIRochester Electronics |
STANDARD SRAM, 1MX8, 70NS |
|
MT46H16M32LFB5-6 AT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
FM24C16UFLM8Rochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
LE25S20MB-AHSanyo Semiconductor/ON Semiconductor |
IC FLASH 2MBIT SPI 8SOIC/SOP |