类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TFBGA |
供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C263-20WCRochester Electronics |
UVPROM, 8KX8, 20NS, CMOS |
|
25LC320A-H/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 5MHZ 8SOIC |
|
MT29F2G01ABAGDWB-IT:G TRMicron Technology |
IC FLASH 2GBIT SPI 8UPDFN |
|
24AA08T/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
W631GU6MB-11Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
IS61NLP25636B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
S25FL032P0XMFB013Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
CYDM128B08-55BVXIRochester Electronics |
IC SRAM 128KBIT PAR 100VFBGA |
|
IS42S32400F-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
S25FL256SDPNFB003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
DS1220AD-150Rochester Electronics |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
71421LA25PFGI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
IS61LPS51218A-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |