English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93AA56AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
GS8342TT37BGD-450IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
71V3577S65PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AT45DB041E-MHN2B-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8UDFN |
|
SST39VF6402B-70-4C-B1KE-TRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
S29JL032H90TFI210Rochester Electronics |
FLASH, 2MX16, 90NS, PDSO48 |
|
HN58V65ATI10ERochester Electronics |
64K EEPROM (8KWORD X 8-BIT) |
|
S25FL064LABNFB043Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8USON |
|
CY14B104NA-ZSP25XITCypress Semiconductor |
IC NVSRAM 4MBIT PAR 54TSOP II |
|
R1LV0816ASB-7SI#S0Rochester Electronics |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
71V546S133PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
BQ4010YMA-85Rochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28DIP |
|
AS4C32M16D3-12BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 96FBGA |
