类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM |
内存大小: | 8Mb (512K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.4V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V546S133PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
BQ4010YMA-85Rochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28DIP |
|
AS4C32M16D3-12BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 96FBGA |
|
IS42VM16800H-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
S29GL128P10TFI020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
CY7C1315KV18-250BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
SST26VF016BT-104I/SMRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIJ |
|
IS43R16160D-5BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
FM24C16UFLEM8Rochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
AT24C01C-SSHM-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8SOIC |
|
AT24CM01-SHM-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
24CW1280T-I/CS0668Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 4CSP |
|
93LC66CT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8SOIC |