English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8, 256 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 6ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43LR16640A-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
S29GL064S70TFI020Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
W25Q128JVBIQ TRWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
AS7C1024C-12JINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS45S16800F-7BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
71V124SA10TYG8Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
S25FL256SDPBHVC13Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
CY7C109V33-15VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
71V2546S150BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
BR24T02FJ-WGE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8SOPJ |
|
25AA160A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
M24C64-DRDW3TP/KSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |
|
M95320-RMN6TPSTMicroelectronics |
IC EEPROM 32KBIT SPI 20MHZ 8SO |
