类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 4.5 µs |
电压 - 电源: | 1.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 8-UFDFN Exposed Pad |
供应商设备包: | 8-UDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28C256F-15TU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
S29GL032N90TFI023Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 56TSOP |
|
CY7C09199V-9AXCRochester Electronics |
IC SRAM 1.152MBIT PAR 100TQFP |
|
11AA010-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SINGLE WIRE 8DIP |
|
S25FL128LAGMFI013Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
CY7C1613KV18-300BZIRochester Electronics |
QDR SRAM, 8MX18, 0.45NS PBGA165 |
|
71V2546S133BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS45S16320F-7TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
RM24C256DS-LMAI-TAdesto Technologies |
IC CBRAM 256KBIT I2C 1MHZ 8UDFN |
|
MD2147H3Rochester Electronics |
STANDARD SRAM, 4KX1, 55NS, MOS, |
|
S25FL128SAGBHI300Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
S26KL512SDABHV023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
MX25L6435EMI-10GMacronix |
IC FLASH 64MBIT SPI 104MHZ 16SOP |