English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | TrayTray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR IV |
| 内存大小: | 144Mb (8M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 633 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.26V ~ 1.34V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 361-BBGA, FCBGA |
| 供应商设备包: | 361-FCBGA (21x21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MR5A16AMA35Everspin Technologies, Inc. |
IC RAM 32MBIT PARALLEL 48FBGA |
|
IS25WP128-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
CY7C1041CV33-15VXCRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
24AA16-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
24AA64T-I/MCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8DFN |
|
CY7C019V-20AXIRochester Electronics |
IC SRAM 1.152MBIT PAR 100TQFP |
|
BR24G01F-3AGTE2ROHM Semiconductor |
IC EEPROM 1K I2C 1MHZ 8SOP |
|
IS43DR16320E-25DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
CY7C09389V-6AXCRochester Electronics |
IC SRAM 1.152MBIT PAR 100TQFP |
|
93LC46A-E/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
SST25VF080B-50-4I-S2AF-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 50MHZ 8SOIC |
|
S29GL512T11DHV023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
BR24G02FVT-3AGE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOPB |
