类型 | 描述 |
---|---|
系列: | FL-L |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WFDFN Exposed Pad |
供应商设备包: | 8-WSON (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53E256M32D2DS-046 AAT:BMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
NM24C02M8XRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SOIC |
|
HM1-6518-5Rochester Electronics |
1024 X 1 CMOS RAM |
|
24LC00T-I/OTGRoving Networks / Microchip Technology |
IC EEPROM 128B I2C SOT23-5 |
|
SST39VF400A-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
NDT18PFH-9METInsignis Technology Corporation |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
93LC66AX-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
MT54V512H18EF-6Rochester Electronics |
QDR SRAM, 512KX18, 2.5NS PBGA165 |
|
CAT24C256YIGT3JNSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT I2C 8TSSOP |
|
11LC161-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8DIP |
|
W25Q128JVEIM TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
CY2545C010Rochester Electronics |
MISC PRODUCTS |
|
70V7339S133BCI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |