类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 2.4V ~ 2.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 256-LBGA |
供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST25VF080B-50-4I-QAF-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 50MHZ 8WSON |
|
M24C32-RDW6TPSTMicroelectronics |
IC EEPROM 32KBIT I2C 1MHZ 8TSSOP |
|
AS6C1616-55TINAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
24AA08HT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C SOT23-5 |
|
M95080-DFMC6TGSTMicroelectronics |
IC EEPROM 8KBIT SPI 8UFDFPN |
|
MT28EW512ABA1LPC-0AAT TRMicron Technology |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
70V657S10BFGRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208FPBGA |
|
FM28V020-TGCypress Semiconductor |
IC FRAM 256KBIT PAR 32TSOP I |
|
BR25L080F-WE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 5MHZ 8SOP |
|
GD25D05CEIGRGigaDevice |
IC FLASH 512KBIT SPI/DUAL 8USON |
|
IS49NLC96400A-25WBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144TWBGA |
|
93LC46BT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
93LC56X-I/SNRochester Electronics |
IC EEPROM 2KBIT MICROWIRE 8SOIC |