类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS6C1008-55STINLAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
AM27C256-55DCRochester Electronics |
UVPROM |
|
70T3339S166BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
STK12C68-SF25Flip Electronics |
IC NVSRAM 64KBIT PARALLEL 28SOIC |
|
71V547S100PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C056V-15BBCRochester Electronics |
DUAL-PORT SRAM, 16KX36 |
|
CY7C2663KV18-450BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
IS45S16100H-7BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
S25FL512SDPBHB213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
N25Q064A11ESEA0FAlliance Memory, Inc. |
IC FLASH 64MBIT SPI 108MHZ 8SO |
|
S29GL064S90TFVV10Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
25LC640A-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
BR24G128F-3GTE2ROHM Semiconductor |
IC EEPROM 128KBIT I2C 8SOP |