类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 576Kb (16K x 36) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 172-LFBGA |
供应商设备包: | 172-FBGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C2663KV18-450BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
IS45S16100H-7BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
S25FL512SDPBHB213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
N25Q064A11ESEA0FAlliance Memory, Inc. |
IC FLASH 64MBIT SPI 108MHZ 8SO |
|
S29GL064S90TFVV10Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
25LC640A-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
BR24G128F-3GTE2ROHM Semiconductor |
IC EEPROM 128KBIT I2C 8SOP |
|
70V3399S133BCI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
CY7C1380C-225ACRochester Electronics |
CACHE SRAM, 512KX36, 2.8NS |
|
W25X40CLZPIG TRWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8WSON |
|
24AA04-I/SNGRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
AT28C256F-15SU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
71124S20YGRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |