类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 2Mb (128K x 18) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 256-LBGA |
供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1380C-225ACRochester Electronics |
CACHE SRAM, 512KX36, 2.8NS |
|
W25X40CLZPIG TRWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8WSON |
|
24AA04-I/SNGRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
AT28C256F-15SU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
71124S20YGRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
24AA32AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
S25FL512SAGBHV313Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
GD25WD20CEIGRGigaDevice |
IC FLSH 2MBIT SPI/QUAD I/O 8USON |
|
AT28HC256-90JURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
71V3577S80BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
24C00-I/PRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8DIP |
|
71V25761S183PFGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS61LPS25636A-200TQ2LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |