类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S27KL0641DABHV030Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
MB85RC64TAPNF-G-BDERE1Fujitsu Electronics America, Inc. |
IC FRAM 64KBIT I2C 3.4MHZ 8SOP |
|
CY7C1011CV33-12ZXCRochester Electronics |
STANDARD SRAM, 128KX16 |
|
AF128GEC5X-2001A3ATP Electronics, Inc. |
IC 128GBIT 153BGA |
|
S29PL127J60TFA080Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
11AA020T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8SOIC |
|
CY7C1049B-20VITRochester Electronics |
STANDARD SRAM, 512KX8, 20NS |
|
W632GU6NB09IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
71V65703S80BQRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
MT58L512L18FT-8.5Rochester Electronics |
CACHE SRAM, 512KX18, 8.5NS PQFP1 |
|
71V416L10PHGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
DS1345YP-100+Maxim Integrated |
IC NVSRAM 1MBIT PAR 34PWRCAP |
|
TMS2114-45NLRochester Electronics |
STANDARD SRAM, 1KX4 |