类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Mb (2M x 8, 1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 1.65V ~ 2.2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GD25Q127CSIGGigaDevice |
IC FLASH 128MBIT SPI/QUAD 8SOP |
|
CY7C1019D-10ZSXIRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
S29GL128P90FFIR10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
DS1270AB-100#Maxim Integrated |
IC NVSRAM 16MBIT PARALLEL 36EDIP |
|
93AA86CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
S29GL512S11DHB020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
SST26VF040AT-80E/MFRoving Networks / Microchip Technology |
IC FLSH 4MBIT SPI/QUAD I/O 8WDFN |
|
M95128-RMN6PSTMicroelectronics |
IC EEPROM 128KBIT SPI 20MHZ 8SO |
|
IS62WV51216EALL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
W987D2HBJX6IWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
CY62128DV30L-70ZITRochester Electronics |
STANDARD SRAM, 128KX8 |
|
EM68C16CWQG-25HEtron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
R1LV5256ESP-7SI#B0Rochester Electronics |
STANDARD SRAM, 32KX8, 70NS |