类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S-25C020A0I-T8T1GABLIC U.S.A. Inc. |
IC EEPROM 2KBIT SPI 5MHZ 8TSSOP |
|
S29GL064S70FHI030Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
CY7C1370B-200ACRochester Electronics |
ZBT SRAM, 512KX36, 3NS |
|
CY7C1520JV18-300BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
FM93C66AENRochester Electronics |
EEPROM, 256X16, SERIAL PDIP8 |
|
M24C04-FDW6TPSTMicroelectronics |
IC EEPROM 4KBIT I2C 8TSSOP |
|
CY7C1418UV18-250BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
N04L63W2AT27IRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1370KV33-200AXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT46H128M16LFDD-48 IT:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
IS46LR16320C-6BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
25LC040AT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8MSOP |
|
24LC64XT-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |