类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 288Kb (32K x 9) |
内存接口: | Parallel |
时钟频率: | 50 MHz |
写周期时间 - 字,页: | - |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS7C3256A-20JINAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
W25Q256JVFIQWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
CY7C1069DV33-10ZSXIFlip Electronics |
IC SRAM 16MBIT PAR 54TSOP II |
|
AS7C1024B-15TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
BR24A08F-WLBH2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8SOP |
|
CY7C15632KV18-450BZCCypress Semiconductor |
NO WARRANTY |
|
7130LA100PDGRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48DIP |
|
AS4C16M16D2-25BINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 84TFBGA |
|
IM6654MJG/883BRochester Electronics |
4096-BIT CMOS UV EPROM |
|
25LC160DT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 5MHZ 8SOIC |
|
70V3399S166BC8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
AM29LV116DT-90EIRochester Electronics |
IC FLASH 16MBIT PARALLEL 40TSOP |
|
MT54V512H18EF-6CRochester Electronics |
512KX18 2.5V VDD HSTL QDRB4 SRAM |