English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II |
| 内存大小: | 72Mb (2M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SN74LS20MR1Rochester Electronics |
1024-BIT EDGE TRIGGERED RAM |
|
MTFC64GAPALBH-IT TRMicron Technology |
IC FLASH 64GBIT MMC 153TFBGA |
|
71256S55DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
25LC512-E/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8SOIC |
|
CY7C277-40WCRochester Electronics |
UVPROM, 32KX8, 20NS |
|
DS1249Y-70#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
IS43TR16256A-15HBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
70T651S12BFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
AT24C08C-MAHM-ERoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8UDFN |
|
BR25H160FJ-2CE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 10MHZ 8SOPJ |
|
71T75802S200BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
SST39WF800B-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
S70FL01GSDPMFV013Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 16SOIC |
