类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 200 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 28-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST39VF402C-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
SST39VF1602-70-4I-EKERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
AT25020AN-10SQ-2.7Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
MB85RS64VYPNF-GS-BCERE1Fujitsu Electronics America, Inc. |
IC FRAM 64KBIT SPI 33MHZ 8SOP |
|
CY7C1370DV25-200BZIRochester Electronics |
ZBT SRAM, 512KX36, 3NS |
|
AS4C1M16S-7TCNAlliance Memory, Inc. |
IC DRAM 16MBIT PAR 50TSOP II |
|
IS61LPS25618EC-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100LQFP |
|
IS43DR81280B-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
S34ML02G100TFV000Flip Electronics |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
FT24C04A-USR-TFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ 8SOP |
|
FT24C02A-KTR-TFremont Micro Devices |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
BR24T02FVT-WE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 8TSSOPB |
|
GS82582TT19GE-450IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |