类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 117 MHz |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-TFBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL256S10FHI020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
CY14V116G7-BZ30XITCypress Semiconductor |
IC NVSRAM 16MBIT PAR 165FBGA |
|
71T75602S150BGIRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
CY7C09569V-100AXCRochester Electronics |
IC SRAM 576KBIT PARALLEL 144TQFP |
|
MT29F2G16ABAGAWP-AIT:G TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
CY7C1314CV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AT24C512C-SHM-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
MD2148HRochester Electronics |
STANDARD SRAM, 1KX4 |
|
CY7C25632KV18-400BZXICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43TR16128CL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
24LC04BT/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
24FC04HT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
W25Q80EWZPIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8WSON |