English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GL-S |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 60ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 1.65V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS45S32200L-7BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
MT28EW01GABA1HJS-0AAT TRMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
W25Q256JVEIQ TRWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
CY7C1032-10JCRochester Electronics |
CACHE SRAM, 64KX18, 10NS PQCC52 |
|
70V25L15PFGRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
IS43DR86400E-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
71V424L10PHGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
SST39VF1601-70-4I-EKE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
24LC00T/STRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8TSSOP |
|
S-24C16DI-K8T3U5ABLIC U.S.A. Inc. |
IC EEPROM 16KBIT I2C 1MHZ 8TMSOP |
|
70T633S12BFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
AS7C34098A-12TINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
23LCV512-I/PRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/DUAL 8DIP |
