English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-WFDFN Exposed Pad |
| 供应商设备包: | 8-TDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
48L640T-I/MNYRoving Networks / Microchip Technology |
IC EERAM 64KBIT SPI 66MHZ 8TDFN |
|
NM93C56EM8XRochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
S-25C040A0I-K8T3UABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 5MHZ 8TMSOP |
|
AS4C64M16D3B-12BANAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
S29GL01GS11DHV023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
71V67803S133BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
GS82564Z36GB-400IGSI Technology |
IC SRAM 288MBIT PAR 119FPBGA |
|
S25FL128SAGNFI001JRochester Electronics |
SERIAL FLASH, 128MB |
|
MT52L512M32D2PF-107 WT:BMicron Technology |
IC DRAM 16GBIT 933MHZ 178FBGA |
|
93LC46B-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
S29JL064J55BHI000Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
IS61QDB451236A-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165LFBGA |
|
CY7C2165KV18-550BZCRochester Electronics |
QDR SRAM, 512KX36, 0.45NS, CMOS, |
