English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 100ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 48-DIP (0.600", 15.24mm) |
| 供应商设备包: | 48-SIDE BRAZED |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SST26VF064BEUI-104I/SMRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 8SOIJ |
|
CY7C1315KV18-300BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AS8C403625-QC75NAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
CY7C1548KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
71V65703S75BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
M93C86-RMN3TP/KSTMicroelectronics |
IC EEPROM 16KBIT SPI 2MHZ 8SO |
|
GD25LQ20COIGRGigaDevice |
IC FLASH 2MBIT SPI/QUAD 8TSSOP |
|
BR93L66FVT-WE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOPB |
|
R1EX24128ASAS0I#S0Rochester Electronics |
EEPROM, 16KX8, SERIAL |
|
CY7C1061G30-10ZSXICypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
71V124SA12PHGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
24AA02UID-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
71V65703S85BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
