类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 2.4V ~ 2.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 256-LBGA |
供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DS2431P-A1+Maxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
IS62WV20488EBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
AS7C1026B-20TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
FEMC008GCG-T340Flexxon |
IC FLASH 64GBIT EMMC 153FBGA |
|
25LC020AT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
NDS63PT9-16ITInsignis Technology Corporation |
IC DRAM 64MBIT PAR 86TSOP II |
|
IS45S32400F-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
DS2502P-E64+Maxim Integrated |
IC EPROM 1KBIT 1-WIRE 6TSOC |
|
AT45DB021E-SHN-BAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8SOIC |
|
CY7C1386BV25-150BGCRochester Electronics |
CACHE SRAM, 512KX36, 3.8NS |
|
93C66BT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ SOT23-6 |
|
CDP68HC68R2ERochester Electronics |
STANDARD SRAM, 256X8, CMOS, PDIP |
|
6116SA90DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |