类型 | 描述 |
---|---|
系列: | GL-T |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 100 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W9825G6KH-6IWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 54TSOP II |
|
93AA86T/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
MB85RC128APNF-G-JNE1Fujitsu Electronics America, Inc. |
IC FRAM 128KBIT I2C 1MHZ 8SOP |
|
FM24C256FLEM8Rochester Electronics |
IC EEPROM 256KBIT I2C 400KHZ 8SO |
|
CY7C1565KV18-450BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AS7C256A-10JCNAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
LE25S40MB-AHRochester Electronics |
IC FLASH 4MBIT SPI 40MHZ 8SOP |
|
IS42S16100H-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
IS43TR16256BL-107MBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
23LC1024-I/STRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/QUAD 8TSSOP |
|
MR3A16AMA35Everspin Technologies, Inc. |
IC RAM 8MBIT PARALLEL 48FBGA |
|
71256SA12YIRochester Electronics |
SRAM 256K (32K X 8-BIT) |
|
DS1270W-100INDRochester Electronics |
IC NVSRAM 16MBIT PARALLEL 36EDIP |