English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 32Kb (2K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1354DV25-200BZIRochester Electronics |
IC SRAM 9MBIT PARALLEL 165FBGA |
|
CY14B101Q2-LHXITCypress Semiconductor |
IC NVSRAM 1MBIT SPI 40MHZ 8DFN |
|
MT48H16M32LFB5-6 IT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
CY62136FV30LL-45ZSXICypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
70V28L15PFGI/2703Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
DS1230ABP-70+Maxim Integrated |
IC NVSRAM 256KBIT PAR 34PWRCAP |
|
CY7C1423SV18-250BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT29F1G08ABAEAWP-AITX:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
25LC040A-I/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8DIP |
|
MTFC32GAPALBH-AAT TRMicron Technology |
IC FLASH 256GBIT MMC 153TFBGA |
|
MT40A256M16LY-062E AIT:FMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
11AA080T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE 8TDFN |
|
70V3319S133BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
