English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
25LC020AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8TSSOP |
|
S26KL128SDABHB030Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 24FBGA |
|
AT34C02-10TI-2.7Rochester Electronics |
IC EEPROM 2KBIT I2C 8TSSOP |
|
CY27C256A-70PCRochester Electronics |
OTP ROM, 32KX8, 70NS PDIP28 |
|
MB85RS64PNF-G-JNE1Fujitsu Electronics America, Inc. |
IC FRAM 64KBIT SPI 20MHZ 8SOP |
|
AS4C128M16D2A-25BCNAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 84FBGA |
|
70T3539MS133BC8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
W29GL512SL9T TRWinbond Electronics Corporation |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
MT58L64L36PT-7.5Rochester Electronics |
CACHE SRAM, 64KX36, 4NS PQFP100 |
|
AT25160B-SSHL-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8SOIC |
|
MT25QU128ABA8E12-0AATMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
IS49RL36160-125EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
MX29LV400CTTC-70GMacronix |
IC FLASH 4MBIT PARALLEL 48TSOP |
