English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 5 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.209", 5.30mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FM24C05UVMT8XRochester Electronics |
IC EEPROM 4KBIT I2C 8TSSOP |
|
AS4C16M16D1A-5TCNTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 66TSOP II |
|
FM25V20-PGRochester Electronics |
IC FRAM 2MBIT SPI 40MHZ 8DIP |
|
IS62WV102416GALL-55TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
IS61NVP409618B-250B3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165TFBGA |
|
70T3519S133BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
IS43LR32160C-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
AS6C4008-55PCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 32DIP |
|
MT28EW128ABA1HPC-0SITMicron Technology |
IC FLASH 128MBIT PARALLEL 64LBGA |
|
HM4-6617-9Rochester Electronics |
2K X 8 CMOS PROM |
|
MR0A16AMYS35REverspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 44TSOP2 |
|
5962-8764814QYARochester Electronics |
UVPROM, 64KX8, 250NS, CMOS |
|
IS42S86400D-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
