类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC640-E/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8SOIC |
|
CY62148BNLL-70SXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 32SOIC |
|
24LC512-I/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
UPD44164184BF5-E40-EQ3-ARochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
CY15B104QN-50SXICypress Semiconductor |
IC FRAM 4MBIT SPI 50MHZ 8SOIC |
|
GD25LD10CEIGRGigaDevice |
IC FLSH 1MBIT SPI/DUAL I/O 8USON |
|
M95040-DRDW8TP/KSTMicroelectronics |
IC EEPROM 4KBIT SPI 20MHZ 8TSSOP |
|
MT25QL512ABB8ESF-0SIT TRMicron Technology |
IC FLASH 512MBIT SPI 16SOP2 |
|
CY62256LL-70ZXITRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
S-93C66BD0I-T8T1UABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
M24128-BRMN6TPSTMicroelectronics |
IC EEPROM 128KBIT I2C 1MHZ 8SO |
|
24LC64T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8MSOP |
|
S29GL01GT13TFNV20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |