类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V28L20PFGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
CY7C109V33-20VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
S29GL01GS11FAIV13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
IS61QDPB42M36A-500B4LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
CY7C2268XV18-600BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
BU9890GUL-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C VCSP50L1 |
|
IS43DR16160B-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
71V3576S150PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MX25R8035FM2IL0Macronix |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
IS43R16160F-5TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
CY62168G30-45BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
70T3319S200BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S25FL512SDSBHV210Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |