English
简体中文
IC FLASH 32MBIT SPI/QUAD 8SOIC
ENCLOSURE 48" WALL MT 18" DP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 32Mb (4M x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 104 MHz |
| 写周期时间 - 字，页: | 60µs, 12ms |
| 访问时间: | - |
| 电压 - 电源: | 1.65V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UPD46184095BF1-E40-EQ1-ARochester Electronics |
DDR SRAM, 2MX9, 0.45NS |
|
IS25WP128F-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
CY15B102N-ZS60XATCypress Semiconductor |
IC FRAM 2MBIT PARALLEL 44TSOP II |
|
BR25L160FJ-WE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 5MHZ 8SOPJ |
|
70V631S15BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
CY7C1061GE30-10BVJXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
24AA512T-I/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DFN |
|
71V124SA15TYG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AS4C2M32SA-7TCNAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
CY62147EV30LL-45BVXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
IS43DR82560C-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
7024L15PFGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
R1LV0816ASD-5SI#B0Rochester Electronics |
IC SRAM 8MBIT PARALLEL 52TSOP II |