类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C145-15AXCRochester Electronics |
IC SRAM 72KBIT PARALLEL 80TQFP |
|
LE24512AQF-AHSanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C VSON8K |
|
AS4C64M16D3B-12BCNAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
25LC160T/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 2MHZ 8SOIC |
|
IS43R32800D-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 144LFBGA |
|
70T651S15BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
CY7C141-55JCTRochester Electronics |
DUAL-PORT SRAM, 1KX8, 55NS |
|
DS2502-E64Rochester Electronics |
IC EPROM 1KBIT 1-WIRE TO92-3 |
|
DS2045Y-100#Rochester Electronics |
IC NVSRAM 1MBIT PARALLEL 256BGA |
|
IS61WV51216BLL-10MLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
IS43LR32640A-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 90WBGA |
|
W25Q16JWBYIM TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WLCSP |
|
IS43R86400E-5BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |