类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | RAM |
技术: | MRAM (Magnetoresistive RAM) |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-LFBGA |
供应商设备包: | 48-FBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT58L256L18F1T-10Rochester Electronics |
CACHE SRAM 256KX18 10NS PQFP100 |
|
MT29F8G16ADADAH4-IT:D TRMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
CY7C1470BV33-167BZITCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43R32400E-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 144LFBGA |
|
CY27H010-45PCRochester Electronics |
OTP ROM, 128KX8, 45NS PDIP32 |
|
7008L15JGRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PLCC |
|
S29GL064S80DHIV10Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
W987D6HBGX7EWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
S25FL164K0XMFB010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
M24C08-DRMN3TP/KSTMicroelectronics |
IC EEPROM 8KBIT I2C 1MHZ 8SO |
|
24AA1026T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIJ |
|
GD25LD40CEIGRGigaDevice |
IC FLSH 4MBIT SPI/DUAL I/O 8USON |
|
AT25TE001-SSHN-TAdesto Technologies |
IC 1MBIT 8SOIC |