类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 2Mb (256K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY27C512-90JIRochester Electronics |
OTP ROM, 64KX8, 90NS PQCC32 |
|
IS46TR16256BL-125KBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
GS8320Z18AGT-333IGSI Technology |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
70V3599S166BCGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
CY7C1354BV25-166ACRochester Electronics |
ZBT SRAM, 256KX36, 3.5NS |
|
25LC640A-E/PRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8DIP |
|
71V3557S85BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V2556SA100BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V424L12PHGRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S29GL01GP12FAI020ARochester Electronics |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
W978H6KBVX2EWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 134VFBGA |
|
71V547S80PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY62148ELL-55SXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 32SOIC |