类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, DDR II |
内存大小: | 72Mb (4M x 18) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C025AV-20AXCFlip Electronics |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
CY7C1418SV18-250BZCRochester Electronics |
SYNC RAM |
|
CAT25C02SERochester Electronics |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
CAT93C66VP2I-GT3Rochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8TDFN |
|
CY7C1367A-150ACTRochester Electronics |
SRAM CHIP SYNC DUAL 3.3V 9M BIT |
|
CY7C0852V-133AXIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 176TQFP |
|
S34ML02G204TFI013Flip Electronics |
IC FLASH 2G PARALLEL |
|
AS4C4M16SA-7B2CNAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 60FBGA |
|
IS61C25616AL-10KLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
M24C32-DFMN6TPSTMicroelectronics |
IC EEPROM 32KBIT I2C 1MHZ 8SO |
|
MT29F1T08EEHAFJ4-3T:A TRMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
GD25Q127CSJGRGigaDevice |
IC FLASH 128MBIT SPI/QUAD 8SOP |
|
DS2431+T&RMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE TO92-3 |