类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93C56BT-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
M24C08-RMC6TGSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8MLP |
|
CY7C1518KV18-300BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C1353S-100AXCRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
RMLV3216AGSD-5S2#AA0Renesas Electronics America |
IC SRAM 32MBIT PAR 52TSOP II |
|
CY7C1460AV33-250AXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
CY7C1020-15VCRochester Electronics |
STANDARD SRAM, 32KX16, 15NS |
|
IS25WP032D-RMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 16SOIC |
|
NM93C56AENRochester Electronics |
EEPROM, 128X16, SERIAL PDIP8 |
|
IS61WV6416EEBLL-10BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48TFBGA |
|
SST39SF040-70-4C-NHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
AS4C1M16S-6TCNTRAlliance Memory, Inc. |
IC DRAM 16MBIT PAR 50TSOP II |
|
S29GL256P11TFI010Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |