类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-CDIP (0.300", 7.62mm) |
供应商设备包: | 28-CDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS7C34096A-10JCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
S29GL064N90DAI022Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
71V016SA20PHGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
M24C16-FMN6TPSTMicroelectronics |
IC EEPROM 16KBIT I2C 400KHZ 8SO |
|
IS46DR16640B-3DBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
AT25SF081-SHD-TAdesto Technologies |
IC FLASH 8MBIT SPI 104MHZ 8SOIC |
|
HN58X2432FPI#S4Rochester Electronics |
TWO-WIRE SERIAL INTERFACE 32K EE |
|
S71KL512SC0BHV003Cypress Semiconductor |
IC FLASH RAM 512MBIT PAR 24FBGA |
|
W25Q128JVPIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
CY7C1420AV18-167BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MR44V064BMAZAATLROHM Semiconductor |
IC FRAM 64KBIT I2C 3.4MHZ 8SOP |
|
IS61QDPB44M18A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
IS43DR16320C-25DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |