English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 45 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24AA256T-E/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
GS8128218GD-333IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
CY14B256I-SFXICypress Semiconductor |
IC NVSRAM 256KBIT I2C 16SOIC |
|
24FC1025-I/SMRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIJ |
|
AT25FF041A-SHN-BAdesto Technologies |
IC FLASH 4MBIT SPI/QUAD 8SOIC |
|
W9412G6KH-5 TRWinbond Electronics Corporation |
IC DRAM 128MBIT PAR 66TSOP II |
|
S29GL128S10TFV023Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
MT47H128M16RT-25E:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 84FBGA |
|
MT41K64M16TW-107 AIT:J TRMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
AS4C256M8D2-25BINAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 60FBGA |
|
IS61LV5128AL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1472BV33-167AXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
CY7C1366A-200AJCRochester Electronics |
CACHE SRAM, 256KX36, 3NS |
