English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3 ns |
| 电压 - 电源: | 2.375V ~ 2.625V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS1350WP-150Rochester Electronics |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
SST26VF032B-104I/MFRoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8WDFN |
|
DS24B33+T&RMaxim Integrated |
IC EEPROM 4KBIT 1-WIRE TO92-3 |
|
25LC040-I/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
|
RM25C32DS-LTAI-BAdesto Technologies |
IC CBRAM 32KBIT SPI 20MHZ 8TSSOP |
|
25AA010AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8DFN |
|
DS1249Y-100Rochester Electronics |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
93C06/SN205Rochester Electronics |
256 BIT MICROWIRE SERIAL EEPROM |
|
S29GL256S90FHSS20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
AT27LV020A-90TIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32TSOP |
|
IS46DR16320D-25DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
MT41K512M16HA-125:AAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
SST39SF010A-70-4I-NHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
