类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TFBGA |
供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24VL014H/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
S26KS128SDPBHB023Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 24FBGA |
|
CY7C1614KV18-250BZIRochester Electronics |
QDR SRAM, 4MX36, 0.45NS PBGA165 |
|
FM24C64EM8Rochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
|
IS45S16160J-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT45DB041E-SSHN-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8SOIC |
|
S25FS256SDSBHI203Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
24AA02E64-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS42S16400J-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
CY7C2170KV18-550BZXCRochester Electronics |
DDR SRAM, 512KX36, 0.45NS PBGA16 |
|
MT58L512Y36FT-6.8Rochester Electronics |
CACHE SRAM, 512KX36, 6.8NS PQFP1 |
|
CY7C199-15VCRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
GD25Q64CFIGRGigaDevice |
IC FLASH 64MBIT SPI/QUAD 16SOP |