English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 150 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.8 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C12681KV18-400BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
23K256T-E/STRoving Networks / Microchip Technology |
IC SRAM 256KBIT SPI 20MHZ 8TSSOP |
|
25AA040AT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8TDFN |
|
MR3A16AMA35REverspin Technologies, Inc. |
IC RAM 8MBIT PARALLEL 48FBGA |
|
W25Q256JVBIMWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
|
CY7C1387B-150BGCRochester Electronics |
CACHE SRAM, 1MX18, 3.8NS |
|
FT24C128A-USG-BFremont Micro Devices |
IC EEPROM 128KBIT I2C 1MHZ 8SOP |
|
IS62WV51216EBLL-45TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
CY7C057V-15AXCRochester Electronics |
IC SRAM 1.152MBIT PAR 144TQFP |
|
24FC04HT-I/MUYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8UDFN |
|
DS1225AD-200IND+Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
70T659S10BCIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
93C66BT-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
