类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 2.4V ~ 2.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 256-LBGA |
供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93C66BT-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
24FC64-I/MCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8DFN |
|
25A512-I/STRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8TSSOP |
|
AT28C010E-12TU-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |
|
IS43TR16256A-15HBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
25AA640A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
|
71V3557S80BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
W632GU8NB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
DS2431G+UMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE 2SFN |
|
GD25LQ80CTIGGigaDevice |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
M48Z58-70PC1STMicroelectronics |
IC NVSRAM 64KBIT PAR 28PCDIP |
|
24LC128T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TDFN |
|
W949D6DBHX5I TRWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 60VFBGA |