类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 36-TFBGA |
供应商设备包: | 36-TFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST26VF016B-104V/SNRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
25LC256X-I/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8TSSOP |
|
CY7C194-25VCTRochester Electronics |
STANDARD SRAM, 64KX4, 25NS, CMOS |
|
24AA16-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8MSOP |
|
FT24C08A-ESG-TFremont Micro Devices |
IC EEPROM 8KBIT I2C 1MHZ 8SOP |
|
CY62147EV30LL-45B2XITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
25LC160DT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
S29GL512S10FAI013Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
CY7C1347B-133BGCTRochester Electronics |
CACHE SRAM, 128KX36, 4NS |
|
25AA160C-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
24AA014-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
71T75802S200BGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
AS4C128M8D3LB-12BCNAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |