类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (512K x 18) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY14B101Q3-SFXIRochester Electronics |
IC NVSRAM 1MBIT SPI 40MHZ 16SOIC |
|
24AA512-I/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DFN |
|
S-25C160A0I-T8T1U3ABLIC U.S.A. Inc. |
IC EEPROM 16KBIT SPI 5MHZ 8TSSOP |
|
AS4C16M16SA-6BANAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
71V2546S133BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
HYB25D512800CE-6 |
IC DRAM 512MBIT PAR 66TSOP II |
|
IS61DDPB41M36A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
71V67703S80BQGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY62158DV30LL-55BVXIRochester Electronics |
STANDARD SRAM, 1MX8, 55NS |
|
FM24C32ULNRochester Electronics |
IC EEPROM 32KBIT I2C 100KHZ 8DIP |
|
CY7C1268XV18-600BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT29F2G08ABAEAWP-AITX:EMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
71P72804S200BQGRochester Electronics |
18MBIT PIPELINED QDRII SRAM |