English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 8Mb (512K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29AS016J70BFI042Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
S29JL032J70TFI223Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
AS6C8008-55BINTRAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
M5M5W816WG-70HI#BTRochester Electronics |
STANDARD SRAM, 512KX16, 70NS |
|
CY7C14141KV18-300BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
FM27C010VE120Rochester Electronics |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
MT53E256M32D2DS-046 IT:B TRMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
SST39VF800A-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
CY7C1518KV18-300BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
24C02CT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY7C1525KV18-300BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT28C256E-25UM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CPGA |
|
FM34W02UM8Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
