类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.4 ns |
电压 - 电源: | 2.4V ~ 2.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 256-LBGA |
供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA256T-I/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
25LC128X-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8TSSOP |
|
CY27C512-200PCRochester Electronics |
OTP ROM, 64KX8, 200NS PDIP28 |
|
IS42S86400F-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
GVT71256G18T-5TRochester Electronics |
SRAM 4M-BIT 256K X 16 |
|
CY7C1911KV18-300BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
S25FL116K0XMFI040Flip Electronics |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
7164S35YGIRochester Electronics |
SRAM 64K (8K X 8-BIT) |
|
CY7C1270XV18-600BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS4C16M16MSA-6BINAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 54FBGA |
|
M5M51008DVP-70H#BTRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
93C46AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
CY62167EV30LL-45ZXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |