English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 16Mb (2M x 8, 1M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1312KV18-300BZCRochester Electronics |
QDR SRAM, 1MX18, 0.45NS, CMOS, P |
|
S25FL064LABBHI030Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
MT57V1MH18AF-6Rochester Electronics |
DDR SRAM, 1MX18, 3NS, CMOS, PBGA |
|
CY7C1514V18-250BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CAT28C65BX-115TRochester Electronics |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IS49NLS93200-33WBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144TWBGA |
|
24AA025UIDT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C SOT23-6 |
|
MT46V128M4FN-5B:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
CY7C1426KV18-300BZXCRochester Electronics |
QDR SRAM, 4MX9, 0.45NS PBGA165 |
|
CY7C1399BN-15VXARochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
CY14B101KA-SP25XITCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
IS62WV10248EBLL-45TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
SST26WF080BAT-104I/NPRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI/QUAD 8USON |
