类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM |
内存大小: | 576Mb (16M x 36) |
内存接口: | Parallel |
时钟频率: | 533 MHz |
写周期时间 - 字,页: | - |
访问时间: | 15 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 144-TFBGA |
供应商设备包: | 144-FBGA (18.5x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1471BV33-133BZXCRochester Electronics |
ZBT SRAM, 2MX36, 6.5NS PBGA165 |
|
71V432S6PFGRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
AS7C4096A-20JCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
CY7C1021BV33L-15BAIRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
25AA040X-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 1MHZ 8TSSOP |
|
IS62C25616BL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
SM662PEE BDS TTX18Silicon Motion |
FERRI EMMC 256GB 3D TLC + EXT. T |
|
X28C010DI-12Rochester Electronics |
IC EEPROM 1MBIT PARALLEL 32CDIP |
|
S29AL016J55TFI023Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
S26KS256SDABHB030Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
IS46DR16640C-3DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
CY7S1041G-10ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS45S16320F-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |