English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 1Gb (64M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 333 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 450 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-TWBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7S1041G-10ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS45S16320F-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
25LC160AT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
24LC08BT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C SOT23-5 |
|
93C46B/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
CY7C1512KV18-250BZXITCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
71V65803S150BG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
70V9369L9PFGRenesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
CY7C1372D-167BGCRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
IS43DR16640B-25DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
AS4C128M16D3LC-12BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT 800MHZ 96FBGA |
|
70T653MS12BCRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
AS4C16M32SC-7TINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 86TSOP II |
