类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 500 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | SC-74A, SOT-753 |
供应商设备包: | SOT-23-5 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V3569S5BFI8Renesas Electronics America |
IC SRAM 576KBIT PAR 208CABGA |
|
AT25DF041B-SSHN-BAdesto Technologies |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |
|
MT58L256L32DS-10Rochester Electronics |
IC SRAM 8MBIT PARALLEL 100TQFP |
|
S25FL128SAGBHBB03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
MR27C6435Rochester Electronics |
UVPROM, 8KX8, 350NS CQCC32 |
|
93LC66BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
S29GL128P90FAIR12Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
CY7C1314CV18-200BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
SST39SF010A-55-4I-NHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
71V3557S75PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
24AA025T-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
IS43TR16640A-15GBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
CAV93C56YE-GT3Rochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |